Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method

Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method

Author(s):

Publication title:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

831

Pub. Year:

2005

Page(from):

107

Page(to):

112

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

Language:

English

Call no.:

M23500/831

Type:

Conference Proceedings

Details

TDL ID:	ZA00014485
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gan, ain, inn and their alloys
Conf. info. (Number):	2004
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2004.11.29-2004.12.03

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