Ge Nanocrystals in MOS-Memory Structures Produced by Molecular-Beam Epitaxy and Rapid-Thermal Processing
- Author(s):
Larsen, A. Nylandsted Kanjilal, A. Hansen, J. Lundsgaard Gaiduk, P. Normand, P. Dimitrakis, P. Tsoukalas, D. Cherkashin, N. Claverie, A. - Publication title:
- Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 830
- Pub. Year:
- 2005
- Page(from):
- 263
- Page(to):
- 268
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997783 [1558997784]
- Language:
- English
- Call no.:
- M23500/830
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Manipulation of 2D Arrays of Si Nanocrystals by Ultra Low Energy Ion Beam Synthesis for non volatile memories applications
Materials Research Society |
7
Conference Proceedings
A COMPARISON OF THE DIFFUSITIVY OF As AND Ge IN Si AT HIGH DONOR CONCENTRATIONS
Materials Research Society |
Materials Research Society |
Materials Research Society |
3
Conference Proceedings
Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
10
Conference Proceedings
PECULIARITIES IN THE EPITAXIAL REGROWTH OF ION-IMPLANTED Si1-xGex ALLOY LAYERS GROWN ON COMPOSITIONALLY GRADED BUFFERS
MRS - Materials Research Society |
MRS - Materials Research Society |
11
Conference Proceedings
Formation of Ge Nanocrystals in High-k Dielectric Layers for Memory Applications
Materials Research Society |
Materials Research Society |
Materials Research Society |