Back-side Storage Non-Volatile Memories: Ultra-thin Silicon Single Crystal Silicon Layers with Complex Thin Film Structure Underneath

Back-side Storage Non-Volatile Memories: Ultra-thin Silicon Single Crystal Silicon Layers with Complex Thin Film Structure Underneath

Author(s):

Publication title:

Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

830

Pub. Year:

2005

Page(from):

31

Page(to):

36

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997783 [1558997784]

Language:

English

Call no.:

M23500/830

Type:

Conference Proceedings

Details

TDL ID:	ZA00014484
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials and processes for nonvolatile memories
Conf. info. (Number):	2004
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2004.11.30-2004.12.02

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