Near band-edge and excitonic behavior of GaAsN epilayers grown by Chemical Beam Epitaxy

Near band-edge and excitonic behavior of GaAsN epilayers grown by Chemical Beam Epitaxy

Author(s):

Coaquira, J. A. H.

Publication title:

Progress in compound semiconductor materials -- electronic and optoelectronic applications

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

829

Pub. Year:

2004

Page(from):

505

Page(to):

510

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997776 [1558997776]

Language:

English

Call no.:

M23500/829

Type:

Conference Proceedings

Details

TDL ID:	ZA00014483
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2004
Conf. info. (Venue):	Boston, MA,USA
Conf. info. (Date):	2004.11.29-2004.12.03

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