Blank Cover Image

Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular Beam Epitaxy

Author(s):
Publication title:
GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
798
Pub. Year:
2004
Page(from):
521
Page(to):
526
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997363 [1558997369]
Language:
English
Call no.:
M23500/798
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Metastable states in semi-insulating GaAs revealed by thermally stimulated current spectroscopy

Fang,Z.-Q., Look,D.C.

Trans Tech Publications
7 Conference Proceedings Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy

Papadimitriou, D., Ptak, A.J., Korakakis, D., Giles, N.C., Myers, T.H.

Materials Research Society
2 Conference Proceedings Er-doped GaN Grown By Molecular Beam Epitaxy

Ng, H.M

Electrochemical Society
8 Conference Proceedings High-quality GaN grown by molecular beam epitaxy on Ge(001)

Siegle, H., Kim, Y., Sudhir, G. S., Kruger, J., Perlin, P., Ager III, J. W., Kisielowski, C., Weber, E. R.

MRS-Materials Research Society
3 Conference Proceedings Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

Armitage, Rob, Yang, Qing, Feick, Henning, Park, Yeonjoon, Weber, Eicke R.

Materials Research Society
9 Conference Proceedings A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy

Bell, A., Harrison, I., Korakakis, D., Larkins, E. C., Hayes, J. M., Kuball, M.

MRS-Materials Research Society
4 Conference Proceedings THE THERMAL STABILITY OF HEAVILY CARBON-DOPED GaAs GROWN BY METALORGANIC MOLECULAR BEAM EPITAXY

Sohn, Hyunchul, Weber, E. R., Nozaki, S., Konagal, M., Takahashi, K.

Materials Research Society
10 Conference Proceedings Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

Kim. S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F., Bishop, S. G.

MRS - Materials Research Society
5 Conference Proceedings Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy

Fang, Z-Q., Look, D. C., Kim, W., Morkoc, H.

MRS-Materials Research Society
11 Conference Proceedings Er Doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates

Rousseau, N., Briot, O., Ribes, V., Aulombard, R. L., network, RENIBEL

Materials Research Society
6 Conference Proceedings Deep Traps in High-Ptlrity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy

Fang, Z.Q., Claflin, B., Look, D.C., Polenta, L., Chen, J., Anderson, T., Mitchel, W.C.

Trans Tech Publications
12 Conference Proceedings High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy

Fang, Z-Q., Claflin, B.B., Look, D.C., Myers, T.H., Koleske, D.D., Wickenden, A.E., Henry, R.L.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12