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LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices

Author(s):
Di Forte Poisson, M-A.
Magis, M.
Tordjman, M.
Aubry, R.
Pesohang, M.
Delage, S.L.
Persio, J. Di
Grimbert, B.
Hoel, V.
Delos, E.
Ducatteau, D.
Gaquiere, C.
7 more
Publication title:
GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
798
Pub. date:
2004
Page(from):
107
Page(to):
112
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997363 [1558997369]
Language:
English
Call no.:
M23500/798
Type:
Conference Proceedings

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