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Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AIN Epilayers

Author(s):
Publication title:
GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
798
Pub. Year:
2004
Page(from):
101
Page(to):
106
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997363 [1558997369]
Language:
English
Call no.:
M23500/798
Type:
Conference Proceedings

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