Growth and Characterization of InAs Quantum Dots on GaAs(100) Emitting at 1.31μm

Growth and Characterization of InAs Quantum Dots on GaAs(100) Emitting at 1.31μm

Author(s):

Celibert, V.

Publication title:

Self-organized processes in semiconductor heteroepitaxy : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

794

Pub. Year:

2004

Page(from):

207

Page(to):

214

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997325 [1558997326]

Language:

English

Call no.:

M23500/794

Type:

Conference Proceedings

Details

TDL ID:	ZA00014466
Series ID:	PA00000011
Conf. info. (Name):	Symposium on self-organized processes in semiconductor heteroepitaxy
Conf. info. (Number):	2003
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2003.12.01-2003.12.05

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