MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation
- Author(s):
- Publication title:
- Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 815
- Pub. Year:
- 2004
- Page(from):
- 199
- Page(to):
- 204
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997653 [1558997652]
- Language:
- English
- Call no.:
- M23500/815
- Type:
- Conference Proceedings
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