Growth and Metrology of Silicon Oxides on Silicon Carbide
- Author(s):
- Hoff, Andrew M.
- Publication title:
- Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 815
- Pub. Year:
- 2004
- Page(from):
- 189
- Page(to):
- 198
- Pages:
- 10
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997653 [1558997652]
- Language:
- English
- Call no.:
- M23500/815
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
8
Conference Proceedings
Effect Of Metallic Contamination On Interface Properties And Oxide Reliability
Materials Research Society |
Trans Tech Publications |
9
Conference Proceedings
Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
Trans Tech Publications |
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Similarities in the Growth Mechanism for the Synthesis of Silicon Carbide, Silicon Nitride, and Silicon
Electrochemical Society |