Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Author(s):

Hauschildt, M.

Publication title:

Materials, technology and reliability for advanced interconnects and low-k dielectrics - 2004 : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

812

Pub. Year:

2004

Page(from):

379

Page(to):

384

Pages:

6

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558997622 [1558997628]

Language:

English

Call no.:

M23500/812

Type:

Conference Proceedings

Details

TDL ID:	ZA00014454
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials, technology and reliability for advanced interconnects and low-k dielectrics
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.13-2004.04.15

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