Dopant Diffusion in Amorphous Silicon

Dopant Diffusion in Amorphous Silicon

Author(s):

Duffy, R.

Publication title:

Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

810

Pub. Year:

2004

Page(from):

437

Page(to):

442

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997608 [1558997601]

Language:

English

Call no.:

M23500/810

Type:

Conference Proceedings

Details

TDL ID:	ZA00014452
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon front-end junction formation
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.13-2004.04.15

Similar Items:

1 Conference Proceedings Impurity Solubility and Redistribution Due to Recrystallization of Preamorphized Silicon Ray Duffy, Vincent Venezia, Marco Hopstaken, Geert Maas, Thuy Dao, Yde Tamminga, Fred Roozeboom, Karel van der Tak Materials Research Society	7 Conference Proceedings DOPANT DIFFUSION IN TiSi2 d'Heurle, F.M., Michel, A.E., LeGoues, F.K., Scilla, G., Wetzel, J.T., Gas, P. Materials Research Society
2 Conference Proceedings Control Of A Metal-Electrode Work-Function By Solid-State Diffusion Of Nitrogen Lander, R.J.P., Hooker, J.C., Zijl, J.P. van, Roozeboom, F., Maas, M.P.M., Tamminga, Y., Wolters, R.A.M. Materials Research Society	8 Conference Proceedings Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation Venezia, V. C., Haynes, T. E., Agarwal, A., Gossmann, H-J., Eaglesham, D. J. MRS - Materials Research Society
3 Conference Proceedings Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions Cowern, N. E. B., Colombeau, B., Lampin, E., Cristiano, F., Claverie, A., Lamrani, Y., Duffy, R., Venezia, V., Heringa, … Materials Research Society	9 Conference Proceedings THE ROLE OF IMPLANTATION DAMAGE IN THE PRODUCTION OF SILICON-ON-INSULATER FILMS BY CO-IMPLANTATION OF HE+ AND H+ Venezia, V.C., Haynes, T.E., Agarwal, A., Eaglesham, D.J., Holland, O.W., Weldon, M.K., Chabal, Y.J. Electrochemical Society
4 Conference Proceedings Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS Surdeanu, R., Ponomarev, Y.V., Cerutti, R., Pawlak, B.J., Nanver, L.K., Hoflijk, I., Stolk, P.A., Dachs, C.J.J., … Electrochemical Society	10 Conference Proceedings Compact modeling of noise for RF CMOS circuit simulation (Invited Paper) Scholten, A.J., Tiemeijer, L.F., Van Langevelde, R., Havens, R.J., Zegers-van Duijnhoven, A.T.A.Z., de Kort, R., … SPIE-The International Society for Optical Engineering
5 Conference Proceedings 26 Tantalum-based Gate Electrode Metals for Advanced CMOS Devices Hooker, J. C., Lander, R.J.P., Cubaynes, F. N., Schram, T., Roozeboom, F., van Zijl, J., Moos, M., van den Heuvel, F.C., … Electrochemical Society	11 Conference Proceedings Low-Leakage Ultra-Scaled Junctions in MOS Devices; from Fundamentals to Improved Device Performance R. Duffy, A. Heringa, J. Loo, E. Augendre, S. Severi, G. Curatola Electrochemical Society
6 Conference Proceedings Experimental study on the mechanism of carbon diffusion in silicon Cowern, N.E.B., Colombeau, B., Roozeboom, F., Hopstaken, M., Snijders, H., Meunier-Beillard, P., Lerch, W. Materials Research Society	12 Conference Proceedings THE EFFECT OF WINDOW EDGE STRESS ON DOPANT DIFFUSION IN SILICON Huang, C.K., Kook, T., Jaccodine, R.J. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12