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Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe

Author(s):
Crosby, R.T.
Jones, K.S.
Law, M.E.
Saavedra, A.F.
Hansen, J.L.
Larsen, A.N.
Liu, J.
2 more
Publication title:
Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
810
Pub. Year:
2004
Page(from):
183
Page(to):
188
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997608 [1558997601]
Language:
English
Call no.:
M23500/810
Type:
Conference Proceedings

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