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Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors

Author(s):
Publication title:
Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
810
Pub. Year:
2004
Page(from):
61
Page(to):
68
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997608 [1558997601]
Language:
English
Call no.:
M23500/810
Type:
Conference Proceedings

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