Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions With Ni Salicide Contacts

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions With Ni Salicide Contacts

Author(s):

Publication title:

Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

810

Pub. Year:

2004

Page(from):

49

Page(to):

54

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997608 [1558997601]

Language:

English

Call no.:

M23500/810

Type:

Conference Proceedings

Details

TDL ID:	ZA00014452
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon front-end junction formation
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.13-2004.04.15

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