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Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD

Author(s):
Elshocht, S.Van
Brijs, B.
Caymax, M.
Conard, T.
Gendt, S.De
Kubicek, S.
Meuris, M.
Onsia, B.
Richard, O.
Teerlinck, I.
Steenbergen, J.Van
Zhao, C.
Heyns, M.
8 more
Publication title:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
809
Pub. date:
2004
Page(from):
287
Page(to):
292
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
Language:
English
Call no.:
M23500/809
Type:
Conference Proceedings

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