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The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

Author(s):
Pawlak, B.J.
Vandervorst, W.
Lindsay, R.
Wolf, I.De
Roozeboom, F.
Delhougne, R.
Benedetti, A.
Loo, R.
Caymax, M.
Maex, K.
Cowern, N.E.B.
6 more
Publication title:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
809
Pub. Year:
2004
Page(from):
281
Page(to):
286
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
Language:
English
Call no.:
M23500/809
Type:
Conference Proceedings

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