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Atomically Controlled Impurity Doping in Si-Based CVD Epitaxial Growth

Author(s):
Publication title:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
809
Pub. Year:
2004
Page(from):
201
Page(to):
212
Pages:
12
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
Language:
English
Call no.:
M23500/809
Type:
Conference Proceedings

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