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SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices

Author(s):
Tezuka, Tsutomu
Mizuno, Tomohisa
Sugiyama, Naoharu
Nakaharai, Shu
Moriyama, Yoshihiko
Usuda, Koji
Numata, Toshinori
Hirashita, Norio
Maeda, Tatsuro
Takagi, Shin-ichi
Miyamura, Yoshiji
Toyoda, Eiji
7 more
Publication title:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
809
Pub. Year:
2004
Page(from):
65
Page(to):
76
Pages:
12
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
Language:
English
Call no.:
M23500/809
Type:
Conference Proceedings

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