The Use of Ion Implantation and Annealing for the Fabrication of Strained Silicon on Thin SiGe Virtual Substrates

The Use of Ion Implantation and Annealing for the Fabrication of Strained Silicon on Thin SiGe Virtual Substrates

Author(s):

Buca, D.

Publication title:

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

809

Pub. Year:

2004

Page(from):

15

Page(to):

26

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997592 [1558997598]

Language:

English

Call no.:

M23500/809

Type:

Conference Proceedings

Details

TDL ID:	ZA00014451
Series ID:	PA00000011
Conf. info. (Name):	Symposium on high-mobility group
Conf. info. (Number):	4th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.13-2004.04.15

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