Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature

Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature

Author(s):

Publication title:

Amorphous and nanocrystalline silicon science and technology - 2004 : symposium held April 13-16, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

808

Pub. Year:

2004

Page(from):

407

Page(to):

412

Pages:

6

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558997585 [155899758X]

Language:

English

Call no.:

M23500/808

Type:

Conference Proceedings

Details

TDL ID:	ZA00014450
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced optical processing of materials
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.13-2004.04.16

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