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The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation

Author(s):
Gila, B. P.
Luo, B.
Kim, J.
Mehandru, R.
LaRoche, J. R.
Onstine, A. H.
Lambers, E.
Siebein, K.
Abernathy, C. R.
Ren, F.
Pearton, S. J.
6 more
Publication title:
Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
786
Pub. date:
2004
Page(from):
385
Page(to):
396
Pages:
12
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997240 [1558997245]
Language:
English
Call no.:
M23500/786
Type:
Conference Proceedings

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