Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen | 東京工業大学附属図書館文献データベース

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Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen

Author(s):

Williams, J. R.

Isaacs-Smith, T.

Franceschetti, A.

Pantelides, S. T.

Publication title:

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

786

Pub. Year:

2004

Page(from):

371

Page(to):

378

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997240 [1558997245]

Language:

English

Call no.:

M23500/786

Type:

Conference Proceedings

Details

TDL ID:	ZA00014443
Series ID:	PA00000011
Conf. info. (Name):	Symposium on fundamentals of novel oxide
Conf. info. (Number):	2003
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2003.12.01-2003.12.04

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