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Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing

Author(s):
Kadoshima, M.
Yamamoto, K.
Fujiwara, H.
Akiyama, K.
Tominaga, K.
Yamagishi, N.
Iwamoto, K.
Ohno, M.
Yasuda, T.
Nabatame, T.
Toriumi, A.
6 more
Publication title:
Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
786
Pub. Year:
2004
Page(from):
279
Page(to):
284
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997240 [1558997245]
Language:
English
Call no.:
M23500/786
Type:
Conference Proceedings

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