Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix

Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix

Author(s):

Mock, P.

Publication title:

Optoelectronics of group-IV-based materials : symposium held April 21-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

770

Pub. Year:

2003

Page(from):

219

Page(to):

224

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997073 [1558997075]

Language:

English

Call no.:

M23500/770

Type:

Conference Proceedings

Details

TDL ID:	ZA00014428
Series ID:	PA00000011
Conf. info. (Name):	Symposium on optoelectronics of group-IV-based materials
Conf. info. (Number):	4th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.21-2003.04.24

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