The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150℃

The Characteristics of Silicon Dioxide Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at 150℃

Author(s):

Publication title:

Flexible electronics -- materials and device technology : symposium held April 22-25, 2003, San Francisco, California, U.S.A

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

769

Pub. Year:

2003

Page(from):

207

Page(to):

212

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997066 [1558997067]

Language:

English

Call no.:

M23500/769

Type:

Conference Proceedings

Details

TDL ID:	ZA00014427
Series ID:	PA00000011
Conf. info. (Name):	Symposium on flexible electronics
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.25

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