Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

Author(s):

Publication title:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

764

Pub. Year:

2003

Page(from):

203

Page(to):

208

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

Language:

English

Call no.:

M23500/764

Type:

Conference Proceedings

Details

TDL ID:	ZA00014422
Series ID:	PA00000011
Conf. info. (Name):	Symposium on new applications for wide-bandgap semiconductors
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.24

Similar Items:

1 Conference Proceedings Photoluminescence Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior Aboujja, M., Crocket, H.C., Scott, M.B., Yeo, Y.K., Hengehold, R.L. Materials Research Society	7 Conference Proceedings Defect Dominant Junction Characteristics of 4H-SiC p+/n Diodes Scofield, J., Dunn, M., Reinhardt, K., Yeo, Y. K., Hengehold, R. MRS - Materials Research Society
2 Conference Proceedings Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation Goodman, S. A., Auret, F. D., Koschnick, F. K., Spaeth, J-M., Beaumont, B., Gibart, P. MRS - Materials Research Society	8 Conference Proceedings Deep Centers and Their Capture Barriers in MOCVD-Grown GaN Johnstone, Daniel K., Ahoujja, Mohamed, Yeo, Yung Kee, Hengehold, Robert L., Guido, Louis Materials Research Society
3 Conference Proceedings Electrical Characterization of As- and [As+Si]-Doped GaN Grown by Metalorganic Chemical Vapor Deposition Ahoujja, M., Elhamri, S., Berney, R., Yeo, Y. K., Hengehold, R. L. Materials Research Society	9 Conference Proceedings Proton Irradiation Induced Defects in 4H-SiC Storasta, L., Carlsson, F.H.C., Sridhara, S.G., Aberg, D., Bergman, J.P., Hallen, A., Janzen, E. Trans Tech Publications
4 Conference Proceedings Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient Spectroscopy Ahoujja, Mo, Hogsed, M., Yeo, Y. K., Hengehold, R. L. Materials Research Society	10 Conference Proceedings Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs Auret, F. D., Myburg, G., Meyer, W. E., Deenapanray, P. N. K., Nordhoff, H., Murtagh, M., Ye, Shu-Ren, Masterson, H. J., … MRS - Materials Research Society
5 Conference Proceedings Deep Level Defect Study of Ion Implanted(Ar,Mg,Cr)n-Type 6H-SiC by Deep Level Transient Spectroscopy Scott,M.B., Scofield,J.D., Yeo,Y.K., Hengehold,R.L. Trans Tech Publications	11 Conference Proceedings Electrical characterization of defects introduced during plasma-based processing of GaAs Auret,F.D., Goodman,S.A., Myburg,G., Meyer,W.E., Deenapanray,P.N.K., Murtagh,M., Ye,S.-R., Masterson,H.J., … Trans Tech Publications
6 Conference Proceedings Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN Hogsed, Michael R., Ahoujja, Mo, Ryu, Mee-Yi, Yeo, Yung Kee, Petrosky, James C., Hengehold, Robert L. Materials Research Society	12 Conference Proceedings Annealing Study of Ion Implated MOCVD and MBE Grown GaN Silkowski, E., Yeo, Y. K., Hengehold, R. L., Khan, M. A., Lei, T., Evans, K., Cerny, C. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12