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MOCVD Growth of AIN/GaN DBR Structure Under Various Ambient Conditions

Author(s):
Publication title:
New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
764
Pub. Year:
2003
Page(from):
63
Page(to):
68
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997011 [1558997016]
Language:
English
Call no.:
M23500/764
Type:
Conference Proceedings

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