Challenges for High Temperature Silicon Carbide Electronics

Challenges for High Temperature Silicon Carbide Electronics

Author(s):

Zetterling, C. -M.

Publication title:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

764

Pub. Year:

2003

Page(from):

15

Page(to):

28

Pages:

14

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

Language:

English

Call no.:

M23500/764

Type:

Conference Proceedings

Details

TDL ID:	ZA00014422
Series ID:	PA00000011
Conf. info. (Name):	Symposium on new applications for wide-bandgap semiconductors
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.24

Similar Items:

1 Conference Proceedings Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures Lee, H. S., Domeij, M., Danielsson, E., Zetterling, C. M., Ostling, M. Trans Tech Publications	7 Conference Proceedings Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K Lee, H.S., Koo, S.M., Zetterling, C.M., Danielsson, E., Domeij, M., Oestling, M. Trans Tech Publications
2 Conference Proceedings Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors Liu, W., Danielsson, E., Zetterling, C.-M., Ostling, M. Trans Tech Publications	8 Conference Proceedings A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors K.G.P. Eriksson, M. Domeij, H.S. Lee, C.M. Zetterling, M. Östling Trans Tech Publications
3 Conference Proceedings Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide R. Ghandi, H.S. Lee, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications	9 Conference Proceedings 4H-SiC Power BJTs with High Current Gain and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling Trans Tech Publications
4 Conference Proceedings A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer Danielsson, E., Domeij, M., Lee, H. S., Zetterling, C. M., Ostling, M., Schoner, A., Hallin, C. Trans Tech Publications	10 Conference Proceedings A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling, E.O. Sveinbjornsson Trans Tech Publications
5 Conference Proceedings Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States Domeij, M., Danielsson, E., Lee, H. S., Zetterling, C. M., Ostling, M. Trans Tech Publications	11 Conference Proceedings Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide Koo, S.-M., Khartsev, S.I., Zetterling, C.-M., Grishin, A.M., Ostling, M. Materials Research Society
6 Conference Proceedings Thin films in silicon carbide semiconductor devices (Invited Paper) Ostling, M., Koo, S.-M., Lee, S.-K., Zetterling, C.-M., Grishin, A. SPIE - The International Society of Optical Engineering	12 Conference Proceedings Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide Lee, S.-K., Zetterling, C.-M., Ostling, M., Fusegawa, I., Magnusson, M.H., Deppert, K., Wernersson, L.-E., Samuelson, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12