New Junction Capacitance Methods for the Study of Defect Distributions and Carrier Properties in the Copper Indium Diselenide Alloys

New Junction Capacitance Methods for the Study of Defect Distributions and Carrier Properties in the Copper Indium Diselenide Alloys

Author(s):

Publication title:

Compound semiconductor photovoltaics : symposium held April 22-25, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

763

Pub. Year:

2003

Page(from):

429

Page(to):

440

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997004 [1558997008]

Language:

English

Call no.:

M23500/763

Type:

Conference Proceedings

Details

TDL ID:	ZA00014421
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor photovoltaics
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.25

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