Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

Author(s):

Wang, C. A.

Publication title:

Compound semiconductor photovoltaics : symposium held April 22-25, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

763

Pub. Year:

2003

Page(from):

315

Page(to):

322

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997004 [1558997008]

Language:

English

Call no.:

M23500/763

Type:

Conference Proceedings

Details

TDL ID:	ZA00014421
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor photovoltaics
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.25

Similar Items:

1 Conference Proceedings Fabrication and Characterization of Wafer-Bonded GaInAsSb Epitaxy for Monolithically Interconnected Thermophotovoltaic Devices Wang, C. A., Shiau, D. A., Murphy, P. G., O'Brien, P. W., Huang, R. K., Connors, M. K., Anderson, A. C., Depoy, D. M., … Materials Research Society	7 Conference Proceedings Wafer Fusion of GaSb to GaAs Wang, C. A., Liau, Z. L., Shiau, D. A., Nitishin, P. M. Materials Research Society
2 Conference Proceedings GaInAsSb Materials for Thermophotovoltaics Wang, C. A., Turner, G. W., Manfra, M. J., Choi, H. K., Spears, D. L. MRS - Materials Research Society	8 Conference Proceedings Temperature dependencies of output characteristics of 1.3-ｦﾌm InGaAsP/InP lasers with different profiles of p-doping Donetsky,D.V., Belenky,G.L., Shtengel,G.E., Reynolds,C.L.,Jr., Kazarinov,R.F., Luryi,S. SPIE-The International Society for Optical Engineering
3 Conference Proceedings MBE GROWTH OF GaInAsSb/AlGaAsSb DOUBLE HETEROSTRUCTURES FOR DIODE LASERS EMITTING BEYOND 2 μm Eglash, S.J., Choi, H.K., Turner, G.W., Finn, M.C. Materials Research Society	9 Conference Proceedings Rote of p-doping profile in InGaAsP multiquantum well lasers:comparison of simulation and experiment Hybertsen,M.S., Alam,M.A., Shtengel,G.E., Belenky,G.L., Reynolds,C.L.,Jr., Donetsky,D.V., Smith,R.K., Baraff,G.A., … SPIE - The International Society for Optical Engineering
4 Conference Proceedings New room-temperature cw InGaAsSb/AlGaAsSb QW ridge diode lasers and their application to CO measurements near 2.3 ｦﾌm Maiorov,M.A., Wang,J., Baer,D.S., Lee,H., Belenky,G.L., Hanson,R.K., Connolly,J.C., Garbuzov,D.Z. SPIE - The International Society for Optical Engineering	10 Conference Proceedings Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications Kumar, R. J., Gutmann, R. J., Borrego, J. M., Dutta, P. S., Wang, C. A., Martinelli, R. U., Nichols, G. Materials Research Society
5 Conference Proceedings Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy L. Liu, N. Chen, F. Gao, Z. Yin, M. Cui Society of Photo-optical Instrumentation Engineers	11 Conference Proceedings Recent developments in high power 2.3-2.4 μm diode lasers L. Shterengas, G. Belenky, M. Kisin, D. Donetsky, D. Westerfeld SPIE - The International Society of Optical Engineering
6 Conference Proceedings Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3μm J. Angellier, D. Barat, G. Boissier, F. Chevier, P. Grech, Y. Rouillard SPIE - The International Society of Optical Engineering	12 Conference Proceedings 1.5 and 2.3 pm diode laser arrays for optical pumping [5887-41] Gourevitch, A., Belenky, G., Shterengas, L., Donetsky, D., Westerfeld, D., Laikhtman, B., Martinelli, R. U., Kim, G. SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12