Ferroelectric Oxide Single-Crystalline Layers by Wafer Bonding and Hydrogen/Helium Implantation
- Author(s):
- Publication title:
- Ferroelectric thin films XI : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 748
- Pub. Year:
- 2003
- Page(from):
- 337
- Page(to):
- 342
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996854 [1558996850]
- Language:
- English
- Call no.:
- M23500/748
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
Silicon Wafer Bonding Using Deposited and Thermal Oxides: A Comparative Study
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
3
Conference Proceedings
Direct Wafer Bonding and Layer Transfer: An Innovative Way for the Integration of Ferroelectric Oxides Into Silicon Technology
MRS - Materials Research Society |
Electrochemical Society |
MRS-Materials Research Society |
10
Conference Proceedings
Low Temperature Si-Si and GaAs-Si Direct Wafer Bonding using Spin-On Glass Intermediate Layer
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
6
Conference Proceedings
Wafer Bonding and Layer Transfer Approach for Strained Silicon-on-Insulator(SSOI) Fabrication
Electrochemical Society |
12
Conference Proceedings
DISSOLUTION AND DISINTEGRATION OF UNIFORM SiO2 LAYERS DURING DIRECT SILICON WAFER BONDING
Materials Research Society |