High-k Gate Dielectrics for Si and Compound Semiconductors by Molecular Beam Epitaxy

High-k Gate Dielectrics for Si and Compound Semiconductors by Molecular Beam Epitaxy

Author(s):

Publication title:

Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

747

Pub. Year:

2003

Page(from):

121

Page(to):

132

Pages:

12

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996847 [1558996842]

Language:

English

Call no.:

M23500/747

Type:

Conference Proceedings

Details

TDL ID:	ZA00014407
Series ID:	PA00000011
Conf. info. (Name):	Symposium on crystalline oxide-silicon heterostructures and oxide optoelectronics
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.04

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