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High-k Gate Dielectrics for Si and Compound Semiconductors by Molecular Beam Epitaxy

Author(s):
Publication title:
Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
745
Pub. Year:
2003
Page(from):
311
Page(to):
322
Pages:
12
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996823 [1558996826]
Language:
English
Call no.:
M23500/745
Type:
Conference Proceedings

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