Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition

Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition

Author(s):

Publication title:

Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

744

Pub. Year:

2003

Page(from):

137

Page(to):

142

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996816 [1558996818]

Language:

English

Call no.:

M23500/744

Type:

Conference Proceedings

Details

TDL ID:	ZA00014404
Series ID:	PA00000011
Conf. info. (Name):	Symposium on progress in semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.05

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