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AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) With the Delta-Doped Barrier Layer

Author(s):
Fan, Z.Y.
Li, J.
Lin, J.Y.
Jiang, H.X.
Liu, Y.
Bardwell, J.A.
Webb, J.B.
Tang, H.
3 more
Publication title:
GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
743
Pub. Year:
2002
Page(from):
567
Page(to):
574
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996809 [155899680X]
Language:
English
Call no.:
M23500/743
Type:
Conference Proceedings

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