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Growth and Fabrication of High Reverse Breakdown Heterojunction n-GaN: P-6H-SiC Diodes

Author(s):
Sampath, A.V.
Bhattacharyya, A.
Singh, R.
Eddy, C.R.
Lamarre, P.
Stacey, W.F.
Morris, R.S.
Moustakas, T.D.
3 more
Publication title:
GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
743
Pub. Year:
2002
Page(from):
449
Page(to):
454
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996809 [155899680X]
Language:
English
Call no.:
M23500/743
Type:
Conference Proceedings

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