Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy

Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy

Author(s):

Onstine, A.H.

Publication title:

GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

743

Pub. Year:

2002

Page(from):

285

Page(to):

292

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996809 [155899680X]

Language:

English

Call no.:

M23500/743

Type:

Conference Proceedings

Details

TDL ID:	ZA00014403
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN and related alloys
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.06

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