Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates
- Author(s):
- Publication title:
- GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 743
- Pub. Year:
- 2002
- Page(from):
- 109
- Page(to):
- 114
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996809 [155899680X]
- Language:
- English
- Call no.:
- M23500/743
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
MRS-Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Trans Tech Publications |
MRS-Materials Research Society |
4
Conference Proceedings
Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE
MRS - Materials Research Society |
MRS-Materials Research Society |
Kluwer Academic Publishers |
MRS-Materials Research Society |
6
Conference Proceedings
Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/raman mapping
MRS-Materials Research Society |
Trans Tech Publications |