Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme

Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme

Author(s):

Rajagopal, Pradeep

Publication title:

GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

743

Pub. Year:

2002

Page(from):

3

Page(to):

8

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996809 [155899680X]

Language:

English

Call no.:

M23500/743

Type:

Conference Proceedings

Details

TDL ID:	ZA00014403
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN and related alloys
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.06

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