Thermal Stress as the Major Factor of Defect Generation in SiC During PVT Growth
- Author(s):
- Publication title:
- Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 742
- Pub. Year:
- 2003
- Page(from):
- 131
- Page(to):
- 136
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996793 [1558996796]
- Language:
- English
- Call no.:
- M23500/742
- Type:
- Conference Proceedings
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