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Thermal Stress as the Major Factor of Defect Generation in SiC During PVT Growth

Author(s):
Publication title:
Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
742
Pub. date:
2003
Page(from):
131
Page(to):
136
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996793 [1558996796]
Language:
English
Call no.:
M23500/742
Type:
Conference Proceedings

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