Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen Doping

Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen Doping

Author(s):

Meziere, Jerome

Publication title:

Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

742

Pub. Year:

2003

Page(from):

29

Page(to):

34

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996793 [1558996796]

Language:

English

Call no.:

M23500/742

Type:

Conference Proceedings

Details

TDL ID:	ZA00014402
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon carbide
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.04

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