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Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)

Author(s):
Kimoto, T.
Hashimoto, K.
Fujihira, K.
Danno, K.
Nakamura, S.
Negoro, Y.
Matsunami, H.
2 more
Publication title:
Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
742
Pub. date:
2003
Page(from):
3
Page(to):
14
Pages:
12
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996793 [1558996796]
Language:
English
Call no.:
M23500/742
Type:
Conference Proceedings

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