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Theoretical limit for the SiO2 thickness in silicon MOS devices

Author(s):
Publication title:
Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment
Title of ser.:
NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:
185
Pub. Year:
2005
Page(from):
309
Page(to):
320
Pages:
12
Pub. info.:
Dordrecht: Kluwer Academic Publishers
ISBN:
9781402030116 [1402030118]
Language:
English
Call no.:
N17050/185
Type:
Conference Proceedings

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