Blank Cover Image

Recent advances in SOI MOSFET devices and circuits for ultra-low power / high temperature applications

Author(s):
Publication title:
Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment
Title of ser.:
NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:
185
Pub. Year:
2005
Page(from):
133
Page(to):
144
Pages:
12
Pub. info.:
Dordrecht: Kluwer Academic Publishers
ISBN:
9781402030116 [1402030118]
Language:
English
Call no.:
N17050/185
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Low-Noise High-Temperature SOI Analog Circuits

Dessard, V., Iniguez, B., Adriaensen, S., Flandre, D.

Kluwer Academic Publishers
7 Conference Proceedings MOSFETs Scaling down: advantages and disadvantages for high temperature applications

Kilchytska, V., Vancaillie, L., de Meyer, K., Flandre, D.

Kluwer Academic Publishers
2 Conference Proceedings A novel CMOS memory cell architecture for ultra-low power applications operating up to 280℃

Levacq, D., Dessard, V., Fiandre, D.

Electrochemical Society
8 Conference Proceedings Nature of high-temperature charge instability of fully depleted SOI MOSFETs

Nazarov, A.N., Lysenko, V.S., Colinge, J.P., Flandre, D.

Electrochemical Society
3 Conference Proceedings Characterization of carrier generation in thin-film SOI devices by reverse gated-diode technique and its application at high temperatures

Rudenko, T.E., Kilchytska, V.I., Flandre, D.

Kluwer Academic Publishers
9 Conference Proceedings Impact of Graded-Channel SOI MOSFET Application on the Performance of Cascode and Wilson Current Mirrors

A. A. Santos, D. Flandre, M. A. Pavanello

Electrochemical Society
4 Conference Proceedings Figures-of-merit of Intrinsic, standard-doped and graded-channel SOt and SOS MOSFETs for analog baseband and RF applications

Levacq, D., Dehan, M., Flandre, D., Raskin, J.-P.

Electrochemical Society
10 Conference Proceedings High-temperature behavior of fully-depleted SOI MOSFETs in case of charge instability of buried oxide

Nazarov, A.N., Houk, Y., Vovk, Ya.N., Lysenko, V.S., Flandre, D.

Electrochemical Society
5 Conference Proceedings Analysis of Harmonic Distortion in Graded-Channel SOI MOSFETs at High Temperatures

Pavanello, M. A., Cerdeira, A., Martino, J. A., Aleman, M. A., Flandre, D.

Electrochemical Society
11 Conference Proceedings Improvement of Sub-0.25 μn Fully-Depleted SOI CMOS Analog Performance by Thinning the Si Film

Nave, A., Dessard, V., Delatte, P., Brodeoux, V., Iniguez, B., Rauly, E., Flandre, D.

Electrochemical Society
6 Conference Proceedings The Graded-Channel SOT MOSFET to Alleviate the Parasitic Bipolar Effects and Improve the Output Characteristics

Pavanello, M A, Martino, I A, Dessard, V, Flandre, D

Electrochemical Society
12 Conference Proceedings Modeling of the Leakage Drain Current in Accumulation-Mode SOI pMOSFETs for High-Temperature Applications

Bellodi, M., Iniguez, B., Flandre, D., Martino, J.A.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12