8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation

8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation

Author(s):

Nakayama, K.

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

969

Page(to):

972

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Dynamic Characteristics of 4H-SiC pin Dlode on (000-1)C-Face with Small Forward Degradation Nakayama, K., Sugawara, Y., Ishii, R., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T. Trans Tech Publications	7 Conference Proceedings Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping Miyanagi, T., Tsuchida, H., Kamata, I., Nakamura, T., Ishii, R., Nakayama, K., Sugawara, Y. Trans Tech Publications
2 Conference Proceedings Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging R. Ishii, T. Miyanagi, I. Kamata, H. Tsuchida, K. Nakayama, Y. Sugawara Trans Tech Publications	8 Conference Proceedings Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, M. Ito Trans Tech Publications
3 Conference Proceedings Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy Tsuchida, H., Kamata, I., Miyanagi, T., Nakamura, T., Nakayama, K., Ishii, R., Sugawara, Y. Trans Tech Publications	9 Conference Proceedings SiC Zener Diode for Gate Protection of 4.5 kV SiCGT K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications
4 Conference Proceedings Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Tsuehida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K., Sugawara, Y. Trans Tech Publications	10 Conference Proceedings Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode K. Asano, A. Tanaka, S. Ogata, K. Nakayama, Y. Miyanagi Trans Tech Publications
5 Conference Proceedings Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes Nakamura, T., Miyanagi, T., Kamata, I., Tsuchida, H. Trans Tech Publications	11 Conference Proceedings Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa, H. Tsuchida Trans Tech Publications
6 Conference Proceedings Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process Tetsuro Hemmi, Koji Nakayama, Katsunori Asano, Tetsuya Miyazawa, Hidekazu Tsuchida Materials Research Society	12 Conference Proceedings Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2 R. Ishii, K. Nakayama, H. Tsuchida, Y. Sugawara Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12