Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
- Author(s):
Perez, R. Mestres, N. Tournier, D. Jorda, X. Vellvehi, M. Godignon, P. - Publication title:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 483-485
- Pub. Year:
- 2005
- Page(from):
- 945
- Page(to):
- 948
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
A Highly Effective Edge Termination Design for SiC Planar High Power Devices
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
Trans Tech Publications |
9
Conference Proceedings
4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
12
Conference Proceedings
New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
Trans Tech Publications |