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Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

Author(s):
Publication title:
Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
Title of ser.:
Materials science forum
Ser. no.:
483-485
Pub. date:
2005
Page(from):
917
Page(to):
920
Pages:
4
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499632 [0878499636]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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