Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching

Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching

Author(s):

Mikami, H.

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

757

Page(to):

760

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Mechanisms in Electrochemical Etching of α-SiC Substrates Mikami, H., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications	7 Conference Proceedings High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications
2 Conference Proceedings Surface Structure of Electrochemically Etched α-SiC Substrates Mikami, H., Umetani, A., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications	8 Conference Proceedings Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications
3 Conference Proceedings Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen T. Hatayama, T. Shimizu, H. Yano, Y. Uraoka, T. Fuyuki Trans Tech Publications	9 Conference Proceedings Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications
4 Conference Proceedings Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching S. Takenami, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki Trans Tech Publications	10 Conference Proceedings Radical Nitridation of Ultra-Thin SiO2/SiC Structure Yano, H., Furumoto, Y., Niwa, T., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications
5 Conference Proceedings Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications	11 Conference Proceedings Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications
6 Conference Proceedings Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods Mikami, H., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications	12 Conference Proceedings Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing D. Takeda, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12